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K4M561633G-BN75 - Samsung semiconductor - 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA

    Buy cheap K4M561633G-BN75 - Samsung semiconductor - 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA from wholesalers
     
    Buy cheap K4M561633G-BN75 - Samsung semiconductor - 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA from wholesalers
    • Buy cheap K4M561633G-BN75 - Samsung semiconductor - 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA from wholesalers

    K4M561633G-BN75 - Samsung semiconductor - 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA

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    Brand Name : Samsung semiconductor
    Certification : Lead free / RoHS Compliant
    Model Number : K4M561633G-BN75
    Price : Contace sales group 1
    Delivery Time : 2-3 days
    Payment Terms : T/T in advance, Paypal, Western Union
    Supply Ability : 5000
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    K4M561633G-BN75 - Samsung semiconductor - 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA


    Quick Detail:


    4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA


    Description:


    The K4M561633G is 268,435,456 bits synchronous high data

    rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits,

    fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle control with the

    use of system clock and I/O transactions are possible on every

    clock cycle. Range of operating frequencies, programmable

    burst length and programmable latencies allow the same device

    to be useful for a variety of high bandwidth, high performance

    memory system applications.


    Applications:


    • 3.0V & 3.3V power supply.

    • LVCMOS compatible with multiplexed address.

    • Four banks operation.

    • MRS cycle with address key programs.

    -. CAS latency (1, 2 & 3).

    -. Burst length (1, 2, 4, 8 & Full page).

    -. Burst type (Sequential & Interleave).

    • EMRS cycle with address key programs.

    • All inputs are sampled at the positive going edge of the system

    clock

    • Burst read single-bit write operation.

    • Special Function Support.

    -. PASR (Partial Array Self Refresh).

    -. Internal TCSR (Temperature Compensated Self Refresh)

    -. DS (Driver Strength)

    • DQM for masking.

    • Auto refresh.

    • 64ms refresh period (8K cycle).

    • Commercial Temperature Operation (-25°C ~ 70°C).

    • Extended Temperature Operation (-25°C ~ 85°C).

    • 54Balls FBGA ( -RXXX -Pb, -BXXX -Pb Free).


    Specifications:


    part no.

    K4M561633G

    Manufacturer

    Samsung semiconductor

    supply ability

    10000

    datecode

    10+

    package

    54Balls FBGA

    remark

    new and original stock


    Competitive Advantage:


    Warranty :180 days !
    Free shipping: Order over $1000 win a free shipment fee
    (goods weight below 3Kg) ,during 20130901-20130930 .


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    • Mega Source is a Stock keeper and trade company of Electronic components .Our branches office include China, Hong Kong, Sigapore , Canada . Offer business, service, resourcing and information for our global member.
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    How to buy >>>


    • Contact us by email & sent your inquire with your Transport destination .
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    Service >>>


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    Quality K4M561633G-BN75 - Samsung semiconductor - 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA for sale
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