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AT28BV64B-20TU- ATMEL Corporation - 64K (8K x 8) Battery-Voltage Parallel EEPROM with Page Write and Software Data Prote

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    Buy cheap AT28BV64B-20TU- ATMEL Corporation - 64K (8K x 8) Battery-Voltage Parallel EEPROM with Page Write and Software Data Prote from wholesalers
     
    Buy cheap AT28BV64B-20TU- ATMEL Corporation - 64K (8K x 8) Battery-Voltage Parallel EEPROM with Page Write and Software Data Prote from wholesalers
    • Buy cheap AT28BV64B-20TU- ATMEL Corporation - 64K (8K x 8) Battery-Voltage Parallel EEPROM with Page Write and Software Data Prote from wholesalers

    AT28BV64B-20TU- ATMEL Corporation - 64K (8K x 8) Battery-Voltage Parallel EEPROM with Page Write and Software Data Prote

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    Brand Name : ATMEL Corporation
    Certification : Lead free / RoHS Compliant
    Model Number : AT28BV64B-20TU
    Price : Contace sales group 1
    Delivery Time : 2-3 days
    Payment Terms : T/T in advance, Paypal, Western Union
    Supply Ability : 5000
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    AT28BV64B-20TU- ATMEL Corporation - 64K (8K x 8) Battery-Voltage Parallel EEPROM with Page Write and Software Data Prote


    Quick Detail:


    64K (8K x 8) Battery-Voltage Parallel EEPROM with Page Write and Software Data Protection


    Description:


    The AT28BV64B is a high-performance electrically erasable programmable read onlymemory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dissipation of just 54 mW. When the device is

    deselected, the CMOS standby current is less than 20 µA.

    The AT28BV64B is accessed like a static RAM for the read or write cycle without the need for external components. The device contains a 64 byte page register to allow writing of up to 64 bytes simultaneously. During a write cycle, the addresses and 1 to 64 bytes of data are internally latched, freeing the address and data bus for other

    operations. Following the initiation of a write cycle, the device will automatically write the latched data using an internal control timer. The end of a write cycle can be detected by DATA polling of I/O7. Once the end of a write cycle has been detected a new access for a read or write can begin.

    Atmel’s AT28BV64B has additional features to ensure high quality and manufacturability. A software data protection mechanism guards against inadvertent writes. The device also includes an extra 64 bytes of EEPROM for device identification or tracking.


    Applications:


    • Single 2.7V to 3.6V Supply

    • Hardware and Software Data Protection

    • Low Power Dissipation

    – 15 mA Active Current

    – 20 µA CMOS Standby Current

    • Fast Read Access Time – 200 ns

    • Automatic Page Write Operation

    – Internal Address and Data Latches for 64 Bytes

    – Internal Control Timer

    • Fast Write Cycle Times

    – Page Write Cycle Time: 10 ms Maximum

    – 1 to 64 Byte Page Write Operation

    • DATA Polling for End of Write Detection

    • High-reliability CMOS Technology

    – Endurance: 100,000 Cycles

    – Data Retention: 10 Years

    • JEDEC Approved Byte-wide Pinout

    • Industrial Temperature Ranges

    • Green (Pb/Halide-free) Packaging Option


    Specifications:


    Datasheets

    AT28BV64B

    Product Photos

    28-TSOP

    Standard Package

    234

    Category

    Integrated Circuits (ICs)

    Family

    Memory

    Series

    -

    Packaging

    Tray

    Format - Memory

    EEPROMs - Parallel

    Memory Type

    EEPROM

    Memory Size

    64K (8K x 8)

    Speed

    200ns

    Interface

    Parallel

    Voltage - Supply

    2.7 V ~ 3.6 V

    Operating Temperature

    -40°C ~ 85°C

    Package / Case

    28-TSSOP (0.465", 11.80mm Width)

    Supplier Device Package

    28-TSOP

    Catalog Page

    1091 (CN081 PDF)

    Other Names

    AT28BV64B20TU


    Competitive Advantage:


    Warranty :180 days !
    Free shipping: Order over $1000 win a free shipment fee
    (goods weight below 3Kg) ,during 20130901-20130930 .


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